A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

TitleA planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures
Publication TypeJournal Article
AuthorsPurches W.E, Rossi A., Zhao R., Kafanov S., Duty T, Dzurak A.S, Rogge S., Tettamanzi G.C

Major funding support

Australian Research Council

The Australian Research Council Centre of Excellence for Engineered Quantum Systems (EQUS) acknowledges the Traditional Owners of Country throughout Australia and their continuing connection to lands, waters and communities. We pay our respects to Aboriginal and Torres Strait Islander cultures and to Elders past and present.